tm march 2013 FDB8443 n-channel powertrench ? mosfet ?2010 fairchild semiconductor corporation FDB8443 rev. c1 www.fairchildsemi.com 1 FDB8443 n-channel powertrench ? mosfet 40 v, 182 a, 3.0 m features ? r ds(on) = 2.3 m ( typ.)@ v gs = 10 v, i d = 80 a ? q g(tot) = 142 nc ( typ.) ? low miller charge, q gd = 32 nc( typ.) ? uis capability (single pulse and repetitive pulse) ? rohs compliant applications ? power tools ? motor drives and uninterruptible power supplies ? synchronous rectification ? battery protection circuit d2-pak (to-263) g s d mosfet maximum ratings t c = 25c unless otherwise noted * calculated continuous current based on maximum allowable j unction temperature. package li mitation current is 120a. thermal characteristics symbol parameter FDB8443 unit v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 182* a - continuous (t c = 100 o c, silicon limited) 129* - continuous (t c = 25 o c, package limited) 120 - continuous (t a = 25 o c, r ja = 43 o c/w) 25 i dm drai n cur rent - pul sed see fi gure 4 e as single pulse avalanche energy (note 1) 531 mj p d power dissipation 188 w derate above 25 o c1.25w/ o c t j , t stg operating and storage temperature -55 to +175 o c symbol parameter FDB8443 unit r jc thermal resistance junction to case, max. 0.8 o c/w r ja thermal resistance junction to ambient, max. (note 2) 62 o c/w r ja thermal resistance junction to ambient to-263, 1in 2 copper pad area, max. 43 o c/w
FDB8443 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDB8443 rev. c1 package marking and ordering information device marking device package reel size tape width quantity FDB8443 FDB8443 to-263ab 330mm 24mm 800 units electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max unit b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v, - - 1 a v gs = 0v t c = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.84v r ds(on) drain to source on resistance i d = 80a, v gs = 10v - 2.3 3.0 m i d = 80a, v gs = 10v, t j = 175 o c -4.25.5 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 9310 - pf c oss output capacitance - 800 - pf c rss reverse transfer capacitance - 510 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 0.9 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 35a i g = 1ma - 142 185 nc q g(th) threshold gate charge v gs = 0 to 2v - 17.5 23 nc q gs gate to source gate charge -36-nc q gs2 gate charge threshold to plateau - 18.8 - nc q gd gate to drain ?miller? charge - 32 - nc switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 0.26mh, i as = 64a. 2: pulse width = 100s. t on turn-on time v dd = 20v, i d = 35a v gs = 10v, r gs = 2 - - 58 ns t d(on) turn-on delay time - 18.4 - ns t r rise time - 17.9 - ns t d(off) turn-off delay time - 55 - ns t f fall time - 13.5 - ns t off turn-off time - - 109 ns v sd source to drain diode voltage i sd = 35a - 0.8 1.25 v i sd = 15a - 0.8 1.0 t rr reverse recovery time i sd = 35a, di sd /dt = 100a/ s -4255ns q rr reverse recovery charge - 48 62 nc
FDB8443 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDB8443 rev. c1 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 t c , case temperature ( o c ) i d , drain current (a) v gs = 10v current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 5000 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 10 100 1000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 5000 t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDB8443 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDB8443 rev. c1 figure 5. 1 10 100 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 012345 0 40 80 120 160 200 v gs = 5v i d , drain current (a) v ds , drain to source voltage (v) v gs = 4v v gs = 4.5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max saturation characteristics figure 9. 345678910 0 20 40 60 80 r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) i d = 80a t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 p s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
FDB8443 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDB8443 rev. c1 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = 250 p a normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 1000 10000 20000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) 50 capacitance vs drain to source voltage figure 14. 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 i d = 35a v dd = 25v v dd = 20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v gate charge vs gate to source voltage typical characteristics
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